Electrode of solar cell and fabricating method thereof

ABSTRACT

A fabricating method of an electrode of a solar cell includes forming a first electrode layer on a photoelectric conversion layer, forming an antireflective layer on the photoelectric conversion layer to cover the first electrode layer, forming a second electrode layer on the antireflective layer, and performing a sintering process. A material of the first electrode layer does not react with the photoelectric conversion layer and the antireflective layer during the sintering process, while at least a material of the second electrode layer reacts with the antireflective layer during the sintering process. The sintering process is performed, such that the second electrode layer reacts with the antireflective layer, and the second electrode layer penetrates the antireflective layer to electrically connect the first electrode layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of Taiwan applicationserial no. 97149291, filed on Dec. 17, 2008. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of specification.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a solar cell, and more particularly toan electrode of a wafer type solar cell and a fabricating methodthereof.

2. Description of Related Art

Solar energy is a renewable energy and causes no pollution. To counterproblems including pollution and shortage of fossil fuels, the solarenergy has always been the most prominent energy. Here, solar cells havebecome a very important research topic at present because the solarcells can directly convert the solar energy into electrical energy.

The most basic structure of a typical solar cell can be divided intofour main parts: a substrate, a P-N junction, an antireflective layer,and two metal electrodes. Generally, the electrodes in the solar cellmodule are respectively disposed on a non-irradiated surface and anirradiated surface for connecting external circuits. The non-irradiatedsurface is regarded as a backside, and the irradiated surface isregarded as a front side. The electrode disposed on the irradiatedsurface (the front side electrode) is designed for improving efficiencyof the solar cell. Currently, a method of fabricating the front sideelectrode frequently adopted in the industry refers to implementation ofa screen printing process with use of metal paste containing metalpowder, glass flit, and organic carriers and a sintering process forcuring the metal paste. However, the existing method of fabricating thefront side electrode has following drawbacks.

The silver paste penetrates through an antireflective layer (siliconnitride) to adhere the metal electrodes to a silicon substrate tightlyby the glass flit in the silver paste. During said penetration of theglass flit, since the sintering process is frequently performed at anexcessively high temperature or for an overly long time, the metalelectrodes overreact with the silicon substrate, and the electrodes thenpenetrate a P-N junction (having a depth approximating to 0.5micrometers) on a surface of the solar cell, thereby reducing or evendeteriorating the efficiency of the solar cell.

A diameter of the glass flit ranges from 10 micrometers to tens ofmicrometers, thus confining the minimum line width of conductive grid inthe electrodes. In most cases, the line width of the conductive grid isgreater than 70 micrometers. Hence, the existing method of fabricatingthe front side electrode cannot be extensively applied as failing tomeet current technical requirements for shortening the line width of theconductive grid in the electrodes, increasing an irradiated area, andimproving the efficiency.

The electrodes formed by using said metal paste containing the glassflit result in formation of an area with reduced quality in themetal/semiconductor junction, which is apt to cause recombination ofcarriers and negatively affect the efficiency of the solar cell.

In light of the above drawbacks, methods for forming electrodes otherthan the metal paste electrodes containing the glass flit are proposed,such as an inkjet printing method, an electroplating method, or thelike. For instance, an electrode layer is formed on a substrate having aP-N diode by conducting the inkjet printing method or the electroplatingmethod, and then an antireflective layer is formed on the substrate tocover the electrode layer. Here, in order to electrically connect theelectrode layer to external circuits, openings must be formed on theantireflective layer to expose the underlying electrode layer.Alternatively, an antireflective layer is formed on a substrate having aP-N diode, and then openings are formed on the antireflective layer toexpose the underlying silicon substrate. Next, electrodes are formed onthe exposed silicon substrate by applying the inkjet printing method orthe electroplating method.

Nonetheless, in the aforesaid methods of fabricating the electrodes, theopenings of the antireflective layer are formed by way of lithography,laser, or the like, and therefore the entire manufacturing process iscomplicated. Moreover, the formation of the openings on theantireflective layer for exposing the underlying silicon substrate islikely to cause damage to the silicon substrate.

SUMMARY OF THE INVENTION

The present invention is directed to an electrode of a solar cell and afabricating method thereof for electrically connecting external circuitsin no need of forming openings on an antireflective layer. Accordingly,the entire fabrication is rather simple and cost-effective.

The present invention is further directed to an electrode of a solarcell and a fabricating method thereof for not forming openings on anantireflective layer and for preventing an electrode layer frompenetrating a P-N junction, thus resulting in simplified fabrication andlow manufacturing costs. Moreover, the efficiency of the electrode ofthe solar cell is not reduced or deteriorated.

In the present invention, a fabricating method of an electrode of asolar cell is provided. The method includes forming a first electrodelayer on a photoelectric conversion layer, forming an antireflectivelayer on the photoelectric conversion layer to cover the first electrodelayer, forming a second electrode layer on the antireflective layer, andperforming a sintering process. A material of the first electrode layerdoes not react with the photoelectric conversion layer and theantireflective layer during the sintering process, while at least amaterial of the second electrode layer reacts with the antireflectivelayer during the sintering process. The sintering process is performed,such that the second electrode layer reacts with the antireflectivelayer, and the second electrode layer penetrates the antireflectivelayer to electrically connect the first electrode layer.

In the present invention, an electrode of a solar cell is provided aswell. The electrode of the solar cell includes a first electrode layer,an antireflective layer, and a second electrode layer. The firstelectrode layer is disposed on a photoelectric conversion layer. Theantireflective layer is disposed on the photoelectric conversion layerto cover the first electrode layer. The second electrode layer isdisposed on the antireflective layer and electrically connected to thefirst electrode layer. Here, a material of the first electrode layerdoes not react with the photoelectric conversion layer and theantireflective layer during a sintering process, while at least amaterial of the second electrode layer reacts with the antireflectivelayer during the sintering process.

In the first electrode layer and in a method of forming the same, thereis no material reacting with the photoelectric conversion layer and theantireflective layer during the sintering process. Thereby, the firstelectrode layer can be prevented from penetrating the P-N junction ofthe photoelectric conversion layer, such that the efficiency of thesolar cell formed by the fabricating method of the present invention isneither reduced nor deteriorated.

Besides, the first electrode layer can be formed by applying a methodcapable of forming the electrode having a small line width, such as aninkjet printing method. Hence, it is likely to form finger-shapedelectrodes with the small line width and to increase the irradiated areaof the solar cell.

Additionally, in the second electrode layer and in a method of formingthe same, there is a material reacting with the antireflective layerduring the sintering process, and therefore the second electrode layercan penetrate the antireflective layer and electrically connect thefirst electrode layer through performing the sintering process in noneed of forming openings on the antireflective layer. Thus, it is proneto obtain electricity from the second electrode layer or to implement awelding process for manufacturing modules, giving rise to simplifiedfabrication and low manufacturing costs.

Moreover, first busbar electrodes are formed in the first electrodelayer, and second busbar electrodes and first busbar electrodes in thesecond electrode layer are overlapped. After implementation of thesintering process, the second busbar electrodes do not go beyond thefirst busbar electrodes. As such, the second electrode layer is notallowed to penetrate the P-N junction of the photoelectric conversionlayer, thereby effectively preventing the efficiency of the electrode ofthe solar cell from being reduced or deteriorated.

To make the above and other features and advantages of the presentinvention more comprehensible, several embodiments accompanied withfigures are detailed as follows.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings constituting a part of this specification areincorporated herein to provide a further understanding of the invention.Here, the drawings illustrate embodiments of the invention and, togetherwith the description, serve to explain the principles of the invention.

FIGS. 1 to 4 are schematic flowcharts illustrating a fabricating methodof an electrode of a solar cell according to a first embodiment of thepresent invention. More specifically, sub-diagrams (a) of FIGS. 1 to 4illustrate schematic top views and sub-diagrams (b) of FIGS. 1 to 4illustrate schematic cross-sectional views taken along a sectional lineI-I′.

FIGS. 5 to 8 are schematic flowcharts illustrating a fabricating methodof an electrode of a solar cell according to a second embodiment of thepresent invention. More specifically, sub-diagrams (a) of FIGS. 5 to 8illustrate schematic top views and sub-diagrams (b) of FIGS. 5 to 8illustrate schematic cross-sectional views taken along a sectional lineII-II′.

DESCRIPTION OF EMBODIMENTS First Embodiment

FIGS. 1 to 4 are schematic flowcharts illustrating a fabricating methodof an electrode of a solar cell according to a first embodiment of thepresent invention. More specifically, sub-diagrams (a) of FIGS. 1 to 4illustrate schematic top views and sub-diagrams (b) of FIGS. 1 to 4illustrate schematic cross-sectional views taken along a sectional lineI-I′.

First, referring to FIGS. 4( a) and 4(b), the electrode of the solarcell in the present embodiment at least includes a first electrode layer110, an antireflective layer 120, and a second electrode layer 130. Thefirst electrode layer 110 is disposed on a photoelectric conversionlayer 100. The antireflective layer 120 is disposed on the photoelectricconversion layer 100 to cover the first electrode layer 110. The secondelectrode layer 130 is disposed on the antireflective layer 120 andelectrically connected to the first electrode layer 110. Here, amaterial of the first electrode layer 110 does not react with thephotoelectric conversion layer 100 and the antireflective layer 120during a sintering process, while at least a material of the secondelectrode layer 130 reacts with the antireflective layer 120 during thesintering process.

In addition, as shown in FIGS. 4( a) and 4(b), the first electrode layer110 of the present embodiment includes a plurality of finger-shapedelectrodes 112 arranged in parallel, for example. Here, thefinger-shaped electrodes 112 are used to collect carriers in thephotoelectric conversion layer 100. Besides, a conductive material ofthe first electrode layer 110 is silver, for example. In order to betterprevent metal lines from blocking incident light, the finger-shapedelectrodes are preferably formed with relatively small line width. Theantireflective layer 120 is made of silicon nitride, for example. Thesecond electrode layer 130 includes a plurality of busbar electrodes132, for example. Here, a conductive material of the second electrodelayer 130 is silver, for example, and a material of the second electrodelayer 130 reacting with the antireflective layer 120 during thesintering process is glass flit, for example. In addition, an extendingdirection of the busbar electrodes 132 crosses over an extendingdirection of the finger-shaped electrodes 112, and the busbar electrodes132 and the finger-shaped electrodes 112 are electrically connected atjunctions of the busbar electrodes 132 and the finger-shaped electrodes112. The busbar electrodes 132 of the second electrode layer 130 can beelectrically connected to external circuits, such that the carrierscollected by the finger-shaped electrodes 112 are complied by the busbarelectrodes 132 and then provided to the external circuits.

The following FIGS. 1 to 4 are schematic flowcharts illustrating afabricating method of the electrode of the solar cell according to thepresent embodiment.

First, referring to FIGS. 1( a) and 1(b), the photoelectric conversionlayer 100 is provided. Here, the photoelectric conversion layer 100 is,for example, a silicon substrate having a P-N junction (not shown). Amethod of forming the silicon substrate having the P-N junction is wellknown to people having ordinary skill in the art, and therefore nofurther description in this regard is provided herein.

Next, the first electrode layer 110 is formed on the photoelectricconversion layer 100. Here, the first electrode layer 110 includes aplurality of finger-shaped electrodes 112 arranged in parallel, forexample, and a conductive material of the first electrode layer 110includes silver or any other appropriate material. Note that the firstelectrode layer 110 does not contain any material reacting with thephotoelectric conversion layer 100 and the subsequently formedantireflective layer during the sintering process. A method of formingthe first electrode layer 110 is not limited in the present invention aslong as the first electrode layer 110 formed thereby does not containany material reacting with the photoelectric conversion layer 100 andthe subsequently formed antireflective layer during the sinteringprocess. For instance, an inkjet printing method or an electroplatingmethod capable of forming electrodes with relatively small line widthcan be applied for forming the first electrode layer 110 according tothe present invention.

Thereafter, referring to FIGS. 2( a) and 2(b), the antireflective layer120 is formed on the photoelectric conversion layer 100 to cover thefirst electrode layer 110. The antireflective layer 120 is made ofsilicon nitride, for example, and the antireflective layer 120 is formedby performing a plasma enhanced chemical vapor deposition (PECVD)process.

After that, referring to FIGS. 3( a) and 3(b), the second electrodelayer 130 is formed on the antireflective layer 120. Here, the secondelectrode layer 130 includes a plurality of busbar electrodes 132, forexample. In addition, an extending direction of the busbar electrodes132 crosses over an extending direction of the finger-shaped electrodes112. A conductive material of the second electrode layer 130 includessilver. It should be mentioned that the second electrode layer 130 isfurther made of at least a material reacting with the antireflectivelayer 120 during the sintering process, such as glass flit. Therefore,the second electrode layer 130 can be formed by performing a screenprinting process, for example. Specifically, the second electrode layer130 is formed on the antireflective layer 120 by performing the screenprinting process with use of paste containing a conductive material andthe material reacting with the antireflective layer 120 during thesintering process.

Next, referring to FIGS. 4( a) and 4(b), the sintering process iscarried out. Since the second electrode layer 130 has the materialreacting with the antireflective layer 120 during the sintering process,the second electrode layer 130 penetrates the antireflective layer 120and electrically connects the first electrode layer 110 at a junction ofthe second electrode layer 130 and the first electrode layer 110.

Besides, a back electrode can be formed on the other surface of thephotoelectric conversion layer 100 according to the present invention,so as to form the complete solar cell. Since a method of forming theback electrode is well known to people having ordinary skill in the art,it is not specifically described in the present embodiment.

Second Embodiment

FIGS. 5 to 8 are schematic flowcharts illustrating a fabricating methodof an electrode of a solar cell according to a second embodiment of thepresent invention. More specifically, sub-diagrams (a) of FIGS. 5 to 8illustrate schematic top views and sub-diagrams (b) of FIGS. 5 to 8illustrate schematic cross-sectional views taken along a sectional lineII-II′.

First, referring to FIGS. 8( a) and 8(b), the electrode of the solarcell in the present embodiment at least includes a first electrode layer210, an antireflective layer 220, and a second electrode layer 230. Thefirst electrode layer 210 is disposed on a photoelectric conversionlayer 200. The antireflective layer 220 is disposed on the photoelectricconversion layer 200 to cover the first electrode layer 210. The secondelectrode layer 230 is disposed on the antireflective layer 220 andelectrically connected to the first electrode layer 210. Here, amaterial of the first electrode layer 210 does not react with thephotoelectric conversion layer 200 and the antireflective layer 220during a sintering process, while at least a material of the secondelectrode layer 230 reacts with the antireflective layer 220 during thesintering process.

In addition, as shown in FIGS. 8( a) and 8(b), the first electrode layer210 of the present embodiment includes a plurality of finger-shapedelectrodes 212 arranged in parallel and a plurality of busbar electrodes214 crossing over the finger-shaped electrodes 212, for example. Here,the finger-shaped electrodes 212 are used to collect carriers in thephotoelectric conversion layer 200. A conductive material of the firstelectrode layer 210 is silver, for example. In order to better preventthe finger-shaped electrodes 212 from blocking incident light, thefinger-shaped electrodes 212 are preferably formed with relatively smallline width. Besides, the antireflective layer 220 is made of siliconnitride, for example. The second electrode layer 230 includes aplurality of busbar electrodes 232, for example. Here, a conductivematerial of the second electrode layer 230 is silver, for example, and amaterial of the second electrode layer 230 reacting with theantireflective layer 220 during the sintering process is glass flit, forexample. Moreover, an extending direction of the busbar electrodes 232equates and overlaps with an extending direction of the busbarelectrodes 214, and the busbar electrodes 232 and the busbar electrodes214 are electrically connected. The busbar electrodes 232 of the secondelectrode layer 230 can be electrically connected to external circuits,such that the carriers collected by the finger-shaped electrodes 212 arecomplied by the busbar electrodes 214 and 232 and then provided to theexternal circuits.

The following FIGS. 5 to 8 are schematic flowcharts illustrating afabricating method of the electrode of the solar cell according to thepresent embodiment.

First, referring to FIGS. 5( a) and 5(b), the photoelectric conversionlayer 200 is provided. Here, the photoelectric conversion layer 200 is,for example, a silicon substrate having a P-N junction (not shown). Amethod of forming the silicon substrate having the P-N junction is wellknown to people having ordinary skill in the art, and therefore nofurther description in this regard is provided herein.

Next, the first electrode layer 210 is formed on the photoelectricconversion layer 200. Here, the first electrode layer 210 includes aplurality of finger-shaped electrodes 212 arranged in parallel and aplurality of busbar electrodes 214 crossing over the finger-shapedelectrodes 212, for example, and a conductive material of the firstelectrode layer 210 includes silver or any other appropriate material.Note that the first electrode layer 210 does not contain any materialreacting with the photoelectric conversion layer 200 and thesubsequently formed antireflective layer during the sintering process. Amethod of forming the first electrode layer 210 is not limited in thepresent invention as long as the first electrode layer 210 formedthereby does not contain any material reacting with the photoelectricconversion layer 200 and the subsequently formed antireflective layerduring the sintering process. For instance, an inkjet printing method oran electroplating method capable of forming electrodes with relativelysmall line width can be applied for forming the first electrode layer210 according to the present invention.

Thereafter, referring to FIGS. 6( a) and 6(b), the antireflective layer220 is formed on the photoelectric conversion layer 200 to cover thefirst electrode layer 210. The antireflective layer 220 is made ofsilicon nitride, for example, and the antireflective layer 220 is formedby performing a PECVD process.

After that, referring to FIGS. 7( a) and 7(b), the second electrodelayer 230 is formed on the antireflective layer 220. Here, the secondelectrode layer 230 includes a plurality of busbar electrodes 232, forexample. In addition, an extending direction of the busbar electrodes232 equates and overlaps with an extending direction of the busbarelectrodes 214. A conductive material of the second electrode layer 230includes silver. It should be mentioned that the second electrode layer230 is further made of at least a material reacting with theantireflective layer 220 during the sintering process, such as glassflit. Therefore, the second electrode layer 230 can be formed byperforming a screen printing process, for example. Specifically, thesecond electrode layer 230 is formed on the antireflective layer 220 byperforming the screen printing process with use of paste containing aconductive material and the material reacting with the antireflectivelayer 220 during the sintering process.

Next, referring to FIGS. 8( a) and 8(b), the sintering process iscarried out. Since the second electrode layer 230 has the materialreacting with the antireflective layer 220 during the sintering process,the second electrode layer 230 penetrates the antireflective layer 220,and the busbar electrodes 232 of the second electrode layer 230electrically connect the busbar electrodes 214 of the first electrodelayer 210.

Besides, a back electrode can be formed on the other surface of thephotoelectric conversion layer 200 according to the present invention,so as to form the complete solar cell. Since a method of forming theback electrode is well known to people having ordinary skill in the art,it is not specifically described in the present embodiment.

In summary, the present invention at least has the following advantages:

In the first electrode layer and in the method of forming the sameaccording to the present invention, there is no material reacting withthe photoelectric conversion layer and the antireflective layer duringthe sintering process. Thereby, the first electrode layer can beprevented from penetrating the P-N junction of the photoelectricconversion layer, such that the efficiency of the solar cell formed bythe fabricating method of the present invention is neither reduced nordeteriorated.

The first electrode layer can be formed by applying the method capableof forming the electrode having a small line width, such as the inkjetprinting method. Hence, it is likely to form the finger-shapedelectrodes with the small line width and to increase the irradiated areaof the solar cell formed by applying the fabricating method of thepresent invention.

In the second electrode layer and in the method of forming the sameaccording to the present invention, there is a material reacting withthe antireflective layer during the sintering process, and therefore thesecond electrode layer can penetrate the antireflective layer andelectrically connect the first electrode layer through performing thesintering process in no need of forming openings on the antireflectivelayer. Thus, it is prone to obtain electricity from the second electrodelayer or to implement a welding process for manufacturing modules,giving rise to simplified fabrication and low manufacturing costs.

According to the second embodiment of the present invention, the busbarelectrodes are formed in the first electrode layer, and the busbarelectrodes in the second electrode layer are overlapped with the busbarelectrodes in the first electrode layer. After implementation of thesintering process, the busbar electrodes in the second electrode layerdo not go beyond the busbar electrodes in the first electrode layer. Assuch, the second electrode layer is not allowed to penetrate the P-Njunction of the photoelectric conversion layer, thereby effectivelypreventing the efficiency of the electrode of the solar cell from beingreduced or deteriorated.

Although the present invention has been disclosed above by theembodiments, they are not intended to limit the present invention.Anybody skilled in the art can make some modifications and alterationswithout departing from the spirit and scope of the present invention.Therefore, the protecting range of the present invention falls in theappended claims.

1. A fabricating method of an electrode of a solar cell, comprising:forming a first electrode layer on a photoelectric conversion layer;forming an antireflective layer on the photoelectric conversion layer tocover the first electrode layer; forming a second electrode layer on theantireflective layer, wherein a material of the first electrode layerdoes not react with the photoelectric conversion layer and theantireflective layer during a sintering process, and at least a materialof the second electrode layer reacts with the antireflective layerduring the sintering process; and performing the sintering process, suchthat the second electrode layer reacts with the antireflective layer andpenetrates the antireflective layer to electrically connect the firstelectrode layer.
 2. The fabricating method of the electrode of the solarcell as claimed in claim 1, wherein the first electrode layer comprisesa plurality of finger-shaped electrodes arranged in parallel.
 3. Thefabricating method of the electrode of the solar cell as claimed inclaim 2, wherein the second electrode layer comprises a plurality ofbusbar electrodes, an extending direction of the plurality of busbarelectrodes crosses over an extending direction of the plurality offinger-shaped electrodes, and the plurality of busbar electrodes and theplurality of finger-shaped electrodes are electrically connected atjunctions of the plurality of busbar electrodes and the plurality offinger-shaped electrodes.
 4. The fabricating method of the electrode ofthe solar cell as claimed in claim 1, wherein the first electrode layercomprises a plurality of finger-shaped electrodes arranged in paralleland a plurality of first busbar electrodes crossing over the pluralityof finger-shaped electrodes.
 5. The fabricating method of the electrodeof the solar cell as claimed in claim 4, wherein the second electrodelayer comprises a plurality of second busbar electrodes, an extendingdirection of the plurality of second busbar electrodes equates andoverlaps with an extending direction of the plurality of first busbarelectrodes, and the plurality of second busbar electrodes and theplurality of first busbar electrodes are electrically connected.
 6. Thefabricating method of the electrode of the solar cell as claimed inclaim 1, wherein a method of forming the first electrode layer comprisesperforming an inkjet printing process or an electroplating process. 7.The fabricating method of the electrode of the solar cell as claimed inclaim 1, wherein a method of forming the second electrode layercomprises performing a screen printing process.
 8. The fabricatingmethod of the electrode of the solar cell as claimed in claim 1, whereina material of the antireflective layer comprises silicon nitride.
 9. Thefabricating method of the electrode of the solar cell as claimed inclaim 1, wherein a material of the second electrode layer which reactswith the antireflective layer during the sintering process comprisesglass flit.
 10. An electrode of a solar cell, comprising: a firstelectrode layer, disposed on a photoelectric conversion layer; anantireflective layer, disposed on the photoelectric conversion layer tocover the first electrode layer; and a second electrode layer, disposedon the antireflective layer and electrically connected to the firstelectrode layer, wherein a material of the first electrode layer doesnot react with the photoelectric conversion layer and the antireflectivelayer during a sintering process, and at least a material of the secondelectrode layer reacts with the antireflective layer during thesintering process.
 11. The electrode of the solar cell as claimed inclaim 10, wherein the first electrode layer comprises a plurality offinger-shaped electrodes arranged in parallel.
 12. The electrode of thesolar cell as claimed in claim 11, wherein the second electrode layercomprises a plurality of busbar electrodes, an extending direction ofthe plurality of busbar electrodes crosses over an extending directionof the plurality of finger-shaped electrodes, and the plurality ofbusbar electrodes and the plurality of finger-shaped electrodes areelectrically connected at junctions of the plurality of busbarelectrodes and the plurality of finger-shaped electrodes.
 13. Theelectrode of the solar cell as claimed in claim 10, wherein the firstelectrode layer comprises a plurality of finger-shaped electrodesarranged in parallel and a plurality of first busbar electrodes crossingover the plurality of finger-shaped electrodes.
 14. The electrode of thesolar cell as claimed in claim 13, wherein the second electrode layercomprises a plurality of second busbar electrodes, an extendingdirection of the plurality of second busbar electrodes equates andoverlaps with an extending direction of the plurality of first busbarelectrodes, and the plurality of second busbar electrodes and theplurality of first busbar electrodes are electrically connected.
 15. Theelectrode of the solar cell as claimed in claim 10, wherein a materialof the antireflective layer comprises silicon nitride.
 16. The electrodeof the solar cell as claimed in claim 10, wherein a material of thesecond electrode layer which reacts with the antireflective layer duringthe sintering process comprises glass flit.